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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= 3V, IC= 2A) APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 80 80 7 4 6 2 UNIT V V .cn mi e V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @Ta=25 A PC Collector Power Dissipation @TC=25 TJ Junction Temperature 35 W 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1932 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V A ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 2A; VCE= 3V COB Output Capacitance fT Current-Gain--Bandwidth Product w w scs .i w IE= 0; VCB= 10V; ftest= 1MHz IE= -0.2A; VCE= 5V; ftest= 10MHz .cn mi e 1000 10000 35 pF 40 MHz isc Websitewww.iscsemi.cn 2 |
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